Teaching Faculties
Mr. Ashvinee Deo Meshram
Assistant Professor Department of Electronics & Communication Engineering
- ashvinee.meshram@jaipur.manipal.edu
- PhD, Indian Institute of Technology Kharagpur, Thesis Submitted
- M Tech, IIITDM Jabalpur, 2018
- B E, Jabalpur Engineering College Jabalpur, 2013
- Microelectronics and Nanoelectronic Semiconductor Devices
- Modeling of Semiconductor Devices
- TCAD based Simulation
- MHRD Doctoral fellowship 2018
- Post graduate scholarship during M.Tech (2016-2018)
- IEEE student
- Ashvinee Deo Meshram, A. Sengupta, T. K. Bhattacharyya, and G. Dutta, "Normally-Off β-(AlxGa1-x)2O3/Ga2O3 Modulation-Doped Field-Effect Transistors With p-GaN Gate: Proposal and Investigation," IEEE Transactions on Electron Devices, vol. 70, no. 2, pp. 454-460, Feb. 2023, doi: https://doi.org/10.1109/TED.2022.3232049.
- Ashvinee Deo Meshram, A. Sengupta, T. K. Bhattacharyya, and G. Dutta, "Design Space of β-(AlxGa1-x)2O3/Ga2O3 Double Heterojunction Field-Effect Transistors for High-Power Applications," IEEE Transactions on Electron Devices, vol. 71, no. 8, pp. 4860-4866, Aug. 2024, doi: https://doi.org/10.1109/ted.2024.3408771.
- Ashvinee Deo Meshram, D. Das, S. K. Joseph, A. Sengupta, T. K. Bhattacharyya, and G. Dutta, "Physics-based analytical modeling of β-(AlxGa1-x)2O3/Ga2O3 MODFETs considering parasitic conduction through delta-doped layer," Journal of Physics D Applied Physics, vol. 58, no. 29, Jul. 2025, doi: https://doi.org/10.1088/1361-6463/adeabc.
- A. Sengupta, Ashvinee Deo Meshram, T. K. Bhattacharyya, and G. Dutta, "Impact of Device Parameters on the Performance of β-Ga2O3 Nanomembrane MESFETs," IEEE Transactions on Electron Devices, vol. 71, no. 4, pp. 2557-2564, Feb. 2024, doi: https://doi.org/10.1109/ted.2024.3367317.
- B. Awadhiya, and Ashvinee Deo Meshram, and P. N. Kondekar, "Understanding negative differential resistance and region of operation in undoped HfO2-based negative capacitance field effect transistor," Applied Physics A, vol. 125, no. 6, May 2019, doi: https://doi.org/10.1007/s00339-019-2718-2.
